W4TXE0X-0D00的功能、参数、电路图、封装、引脚图、PDF资料

W4TXE0X-0D00中文资料

功能介紹中文 :

功能介紹英文 : Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition